hole mobility
英 [həʊl məʊˈbɪləti]
美 [hoʊl moʊˈbɪləti]
空穴迁移率
双语例句
- When titania nanotubes are doped into the hole-transport layer, the hole mobility of the device is greatly increased due to the good p-type conductibility of titania nanotubes.
由于二氧化钛纳米管具有p型传导特性，可以显著增大空穴传输层中载流子的迁移率。 - In this paper, the high temperature models and calculation results of silicon materials 'intrinsic carrier concentration m, energy gap Eg, effective mass of electron and hole as well as carrier mobility p are introduced.
介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。 - Separate strained Si channel n-MOSFET and strained SiGe channel p-MOSFET with high performance have been fabricated using the characteristics that electron mobility of tension strained Si and hole mobility of compressive strained SiGe are higher than counterparts of body Si.
利用张应变Si电子迁移率和压应变SiGe空穴迁移率比体Si高的优越特性，可以制作出高性能的n-MOSFET和p-MOSFET。 - K · p and Monte Carlo Studies of Hole Mobility in Strained-Si pMOS Inversion Layers
应变硅pMOS反型层中空穴迁移率k·p及蒙特卡罗模拟研究 - The hole or electron mobility may be promoted utilizing strain effect produced by epitaxial growth technique for SiGe or Si pseudomorphy.
利用生长SiGe／Si赝晶产生的应变效应可以改变材料性质，提高载流子的迁移率。 - By the model, the variation of hole mobility with strain is simulated and the influences of some parameters on mobility are analyzed and discussed for device-optimizing.
利用该模型，对影响空穴迁移率的主要因素进行了分析讨论。 - For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。 - General aromatic amines due to its high hole mobility, is particularly common hole transport materials.
一般芳香胺类化合物由于其具有空穴迁移率高的性能，是特别常用的空穴传输材料。 - In order to broaden the absorption spectrum of conjugated polymer donor materials, improve their solubility and hole mobility, three new series of new benzoxazolyl conjugated polymers were designed and synthesized in this dissertation.
本文以拓宽聚合物的吸收光谱、改善其溶解性能和提高载流子迁移率为目的，设计与合成了三个系列的新型苯并唑类共轭聚合物。 - The absorption spectra and hole mobility of conjugated polymer donor materials are the major factors to affect the power conversion efficiency ( PCE) of polymer solar cells ( PSCs).
聚合物光伏材料的吸收光谱与载流子迁移率是影响聚合物太阳能能量转换效率的重要因素。 - In order to improve the hole mobility of PT and lower the HOMO and broaden the absorption spectrum, a novel conjugated polymer, poly ( thienylene-vinylene-thienylene) with cyano substituent ( CN-PTVT) was synthesized.
为进一步有效地提高聚噻吩的空穴迁移率、降低聚合物的HOMO能级以及拓宽聚合物的吸收光谱，设计合成了一种新型的腈基取代的聚（噻吩-乙烯-噻吩）的聚合物CN-PTVT。 - The absorption spectra, hole mobility and the voltage of open-circuit play important part in the power conversion efficiency of the polymer solar cells.
太阳能电池中几个非常关键的因素如吸收光谱、空穴迁移率、开路电压对太阳能电池的效率有着重要的影响。 - Diamond has many advantages compared with other semiconductor materials, such as low dielectric constant, high band gap, good electron hole mobility, high thermal conductivity and optical properties.
金刚石作为宽禁带半导体材料与其它材料相比，具有非常低的介电常数，很高的禁带宽度和极高的热导率及优良的光学性质。 - On the other hand, the conventional Si semiconductor will be incapable for further higher-degree integrated circuit because its hole mobility is much lower than its electron mobility. So it is necessary to find another new semiconductor material.
另一方面，由于硅中空穴迁移率远低于电子迁移率，传统的硅半导体衬底也逐渐不能满足集成电路（IC）更高集成度的要求，寻找新型的半导体衬底也是大势所趋。 - As electron donor materials of conjugated polymer solar cells, the goal is to have wide spectrum and strong absorption in the visible region, high hole mobility, good solubility and easy processing performance, good film and thermal stability.
作为共轭聚合物太阳能电池的电子给体材料，要求在可见光区具有宽光谱和强吸收、高空穴迁移率、良好的溶解性能和易于加工性能、好的成膜性和热稳定性等。